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IRF7309PBF中文资料PDF规格书
IRF7309PBF规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications.
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
产品属性
- 型号：
IRF7309PBF
- 功能描述：
MOSFET 30V DUAL N/P CH 20V VGS MAX
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2020+ |
SOP8 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
Infineon Technologies |
21+ |
8SO |
13880 |
公司只售原装,支持实单 |
询价 | ||
IR |
13+ |
SOP-8 |
191 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
23+ |
NA |
265 |
专做原装正品,假一罚百! |
询价 | ||
IR |
2022 |
SOP-8 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
INFINEON/英飞凌 |
23+ |
NA |
30000 |
有挂就有货,只做原装免费送样,可BOM配单 |
询价 | ||
IR |
2021+ |
QFN |
3500 |
十年专营原装现货,假一赔十 |
询价 | ||
IR |
1948+ |
SOP8 |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
Infineon |
23+ |
N/A |
30000 |
代理全新原装现货,价格优势 |
询价 | ||
Infineon Technologies |
23+ |
8SO |
9000 |
原装正品，支持实单 |
询价 |
