Advanced Power MOSFET (400V, 1.8ohm, 3.3A)

Advanced Power MOSFET (400V, 1.8ohm, 3.3A) FEATURES ♦Avalanche Rugged Technology ♦Rugged Gate Oxide Technology ♦Lower Input Capacitance ♦Improved Gate Charge ♦Extended Safe Operating Area ♦Lower Leakage Current: 10µA (Max.) @ VDS= 400V ♦Lower RDS(ON): 1.408Ω(Typ.)

文件：227.56 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Mosfet Transistor

文件：203.67 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET (400V, 1.8ohm, 3.3A)

ONSEMI

安森美半导体

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：879.14 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

文件：64.33 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel enhancement mode power mos transistors

文件：343.23 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体