Power MOSFET(Vdss=-20V)

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well know

文件：158.65 Kbytes 页数：7 Pages

IRF

Power MOSFET(Vdss=-20V)

Infineon

英飞凌

A 7-Bit Current DAC with PMBus Interface

文件：1.66914 Mbytes 页数：24 Pages

LINER

凌力尔特

A 7-Bit Current DAC with PMBus Interface

文件：1.66914 Mbytes 页数：24 Pages

AD

亚德诺

A 7-Bit Current DAC with Digital PMBus Interface

文件：1.24645 Mbytes 页数：10 Pages

LINER

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