Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

文件：178.37 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

文件：255.7 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

文件：255.7 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技

HEXFET POWER MOSFET (VDSS = 400V , RDS(on) = 1.8廓 , ID = 3.3A )

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • Available in Tape & Reel • Dynamic dV/dt Rating • Repetitive Avalanch

文件：974.66 Kbytes 页数：8 Pages

IRF

Power MOSFET

文件：255.7 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技

HEXFET POWER MOSFET

文件：372.09 Kbytes 页数：8 Pages

IRF

Power MOSFET

文件：255.7 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

Surface-mount\nAvailable in tape and reel\nDynamic dv/dt rating;

Vishay

威世科技

HEXFET POWER MOSFET (VDSS = 400V , RDS(on) = 1.8Ω , ID = 3.3A )

Infineon

英飞凌

HEXFET POWER MOSFET

Infineon

英飞凌