HEXFET짰 Power MOSFET

文件：259.93 Kbytes 页数：10 Pages

IRF

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Features * VDs (v= 50V * RDpsON)

文件：420.2 Kbytes 页数：9 Pages

UMW

友台半导体

adavanced process technology

Description The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The

文件：309.95 Kbytes 页数：10 Pages

IRF

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.2215 Mbytes 页数：9 Pages

VBSEMI

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