丝印：IRF7204；Package：SOP-8；- 30V P - Channel Enhancement Mode MOSFET

General Description: The IRF7204 is the single P-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and low gate resistance. It’s up to -30V operation voltage is well suited in switching mode power supply, SMPS, notebook computer power m

文件：1.04499 Mbytes 页数：7 Pages

EVVOSEMI

翊欧

Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A)

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for

文件：145.18 Kbytes 页数：9 Pages

IRF

丝印：IRF7204；Package：SOP-8；- 30V P - Channel Enhancement Mode MOSFET

Features: RDS(ON)

文件：1.52782 Mbytes 页数：7 Pages

UMW

友台半导体

采用 SO-8 封装的 -20V 单 P 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET;

Infineon

英飞凌

HEXFET짰 Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：243.67 Kbytes 页数：9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：249.27 Kbytes 页数：9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：249.27 Kbytes 页数：9 Pages

IRF

Adavanced Process Technology

文件：249.27 Kbytes 页数：9 Pages

IRF

P-Channel 20-V (D-S) MOSFET

文件：2.01837 Mbytes 页数：9 Pages

VBSEMI

微碧半导体