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IRF3808

Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A??

Description Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest process ing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating tempe

文件:131.039 Kbytes 页数:9 Pages

IRF

IRF3808

Integrated Starter Alternator

Description Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temper

文件:831.94 Kbytes 页数:9 Pages

KERSEMI

IRF3808

N-Channel MOSFET Transistor

文件:338.85 Kbytes 页数:2 Pages

ISC

无锡固电

IRF3808

采用 TO-220 封装的 75V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌

IRF3808L

AUTOMOTIVE MOSFET

Description Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temper

文件:162.73 Kbytes 页数:11 Pages

IRF

IRF3808LPBF

Advanced Process Technology

Description This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved

文件:264.76 Kbytes 页数:12 Pages

IRF

IRF3808PBF

HEXFET Power MOSFET

Description Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET Æ Power MOSFET utilizes the latest process ing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating tem

文件:213.27 Kbytes 页数:9 Pages

IRF

IRF3808S

AUTOMOTIVE MOSFET

Description Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temper

文件:162.73 Kbytes 页数:11 Pages

IRF

IRF3808SPBF

AUTOMOTIVE MOSFET

Description This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved

文件:301.17 Kbytes 页数:11 Pages

IRF

IRF3808SPBF

Advanced Process Technology

Description This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved

文件:264.76 Kbytes 页数:12 Pages

IRF

技术参数

  • OPN:

    IRF3808PBF

  • Qualification:

    Non-Automotive

  • Package name:

    TO220

  • VDS max:

    75 V

  • RDS (on) @10V max:

    7 mΩ

  • ID @25°C max:

    140 A

  • QG typ @10V:

    150 nC

  • Special Features:

    Wide SOA

  • Polarity:

    N

  • VGS(th) min:

    2 V

  • VGS(th) max:

    4 V

  • VGS(th):

    3 V

  • Technology:

    IR MOSFET™

供应商型号品牌批号封装库存备注价格
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
04+
TO-220AB
1000
自己公司全新库存绝对有货
询价
IR
24+
TO-220
39996
询价
IR
24+
原厂封装
2000
原装现货假一罚十
询价
STRRPBF
25+
SOT23-6
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IOR
25+
TO-220
2987
绝对全新原装现货供应!
询价
IR
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
询价
VISHAY/IR
18+
TO-220
85600
保证进口原装可开17%增值税发票
询价
IR
18+
TO-220
41200
原装正品,现货特价
询价
IR
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
询价
更多IRF3808供应商 更新时间2025-10-8 13:00:00