IRF3808S中文资料IRF数据手册PDF规格书
IRF3808S规格书详情
Description
Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switch ing speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other applications.
Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
Typical Applications
● Integrated Starter Alternator
● 42 Volts Automotive Electrical Systems
产品属性
- 型号:
IRF3808S
- 制造商:
IRF
- 制造商全称:
International Rectifier
- 功能描述:
AUTOMOTIVE MOSFET
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-263 |
35890 |
询价 | |||
IR |
25+23+ |
TO263 |
72121 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
IR |
24+ |
NA/ |
6451 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
22+ |
D2-PAK |
8000 |
原装正品支持实单 |
询价 | ||
IR |
24+ |
TO-263 |
501286 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
Infineon/英飞凌 |
24+ |
D2PAK |
25000 |
原装正品,假一赔十! |
询价 | ||
Infineon/英飞凌 |
21+ |
D2PAK |
6820 |
只做原装,质量保证 |
询价 | ||
IR |
23+ |
TO-263 |
12500 |
全新原装现货热卖,价格优势 |
询价 | ||
IR |
24+ |
D2-Pak |
8866 |
询价 | |||
Infineon/英飞凌 |
24+ |
D2PAK |
6000 |
全新原装深圳仓库现货有单必成 |
询价 |