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IRF3808SPBF中文资料IRF数据手册PDF规格书
IRF3808SPBF规格书详情
描述 Description
This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in a wide variety of applications.
Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
Typical Applications
● Industrial Motor Drive
产品属性
- 型号：
IRF3808SPBF
- 功能描述：
MOSFET 75V 1 N-CH HEXFET 7mOhms 150nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
INFINEON/英飞凌 |
2023+ |
TO-263 |
6895 |
原厂全新正品旗舰店优势现货 |
询价 | ||
INFINEON/英飞凌 |
25+ |
明嘉莱只做原装正品现货 |
2510000 |
TO-263 |
询价 | ||
Infineon(英飞凌) |
24+ |
D2PAK |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
IR |
24+ |
TO-263 |
5000 |
原装现货假一赔十 |
询价 | ||
IR |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
询价 | ||
INFINEON |
1734 |
con |
6 |
现货常备产品原装可到京北通宇商城查价格 |
询价 | ||
Infineon |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
Infineon Technologies |
23+ |
原装 |
7000 |
询价 | |||
IR |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 |
