IPD220N06L3 G

Features ● ldeal for high frequency switching and sync. rec. ● Optimized technology for DC/DC converter ● Excellent gate chargx x R DS(ON) product (FOM) ● N-channel, logic level ● 100% avalanche tested ● Pb-free plating; RoHS compliant ● Qualfied according to JEDEC for target applicati

文件：453.78 Kbytes 页数：9 Pages

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N-Channel MOSFET Transistor

文件：335.86 Kbytes 页数：2 Pages

ISC

无锡固电

OptiMOS(TM)3 Power-Transistor

文件：218.66 Kbytes 页数：9 Pages

Infineon

英飞凌

OptiMOS(TM)3 Power-Transistor

文件：218.66 Kbytes 页数：9 Pages

Infineon

英飞凌

N 沟道功率 MOSFET

OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and f • Excellent gate charge x R DS(on) product (FOM)\n• Very low on-resistance R DS(on)\n• Ideal for fast switching applications\n• RoHS compliant - halogen free\n• MSL1 rated\n\n优势:\n• Highest system efficiency\n• Less paralleling required\n• Increased power density\n• System cost reduction\n• Very low;

Infineon

英飞凌