30 V、N 沟道、最大 20 mΩ、汽车 MOSFET、DPAK、OptiMOS ™

• N-channel - Enhancement mode\n• Automotive AEC Q101 qualified\n• MSL1 up to 260°C peak reflow\n• 175°C operating temperature\n• Green Package (RoHS compliant)\n• 100% Avalanche tested\n\n优势:\n• Low switching and conduction power losses for highest thermal efficiency\n• Robust packages with sup;

Infineon

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OptiMOS Power-Transistor

文件：157.77 Kbytes 页数：8 Pages

Infineon

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OptiMOS Power-Transistor Feature Enhancement mode Logic Level

文件：687.74 Kbytes 页数：9 Pages

Infineon

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OptiMOS Power-Transistor

Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant

文件：261.529 Kbytes 页数：8 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

文件：1.01962 Mbytes 页数：8 Pages

VBSEMI

微碧半导体