首页 >IPD30N03S2L>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

IPD30N03S2L

Marking:DPAK;Package:TO-252;Isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPD30N03S2L-07

OptiMOS Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPD30N03S2L-10

OptiMOS Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPD30N03S2L-10

N-Channel 30-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IPD30N03S2L-20

OptiMOS Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

ISPD30N03S2L

N-ChannelMOSFETTransistor

•DESCRITION •Superiorthermalresistance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤10mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPD30N03S2L

N-ChannelMOSFETTransistor

•DESCRITION •Superiorthermalresistance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤10mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IPD30N03S2L

  • 功能描述:

    MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON
24+
PG-TO252-3D-PAK(TO
8866
询价
Infineon
24+
NA
3000
进口原装正品优势供应
询价
INFINEON
19+
TO-252
74348
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
INFINE0N
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
infineon
1822+
TO-252
9852
只做原装正品假一赔十为客户做到零风险!!
询价
infineon
18+
TO-252
41200
原装正品,现货特价
询价
Infineon
20+
TO-252
36900
原装优势主营型号-可开原型号增税票
询价
INFINEO
24+
TO-252
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
INFINE0N
21+
DPAK (PG-TO252-3)
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
询价
INFINEON
17+PBF
TO-252
22500
现货
询价
更多IPD30N03S2L供应商 更新时间2025-5-2 16:30:00