丝印：3N10L26；Package：PG-TO252-3-11；OptiMOS-T Power-Transistor

Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100 Avalanche tested

文件：188.79 Kbytes 页数：9 Pages

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isc N-Channel MOSFET Transistor

·FEATURES ·Drain Current –ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 24mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra Low On-resistance ·F

文件：354.62 Kbytes 页数：2 Pages

ISC

无锡固电

Material Content Data Sheet

文件：33.25 Kbytes 页数：1 Pages

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100 V、N沟道、最大24 mΩ、汽车MOSFET、DPAK、OptiMOS ™ -T

• N-channel - Enhancement mode\n • Automotive AEC Q101 qualified\n • MSL1 up to 260°C peak reflow\n • 175°C operating temperature\n • Green product (RoHS compliant)\n • 100% Avalanche tested\n\n优势:\n• highest current capability 180A\n • low switching and conduction power losses for high thermal ;

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Material Content Data Sheet

文件：33.25 Kbytes 页数：1 Pages

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