IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=1.7V@IC=50A ·High Speed Smooth Switching Device For Hard & Soft Switching APPLICATIONS ·Synchronous Rectification in SMPS ·Automotive Chargers ·UPS,PFC ·High Voltage Auxiliaries

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ISC

无锡固电

High speed switching series fifth generation

文件：1.37058 Mbytes 页数：14 Pages

INFINEON

英飞凌

丝印：G50ES5；Package：PG-TO263-3；High speed switching series fifth generation

文件：1.35654 Mbytes 页数：14 Pages

INFINEON

英飞凌

650 V、50 A IGBT，带反并联二极管，采用 TO-263 封装

The 650 V, 50 A high speed switching TRENCHSTOP™ 5 in D2Pak (TO263) package single  IGBT, redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high eff • 650 V breakthrough voltage\n• Compared to Infineon’s High Speed 3 family\n• Factor 2.5 lower Qg\n• Factor 2 reduction in switching losses\n• 200mV reduction in VCEsat\n• Co-packed with Infineon’s new Rapid Si-diode technology\n• Low COES/EOSS\n• Mild positive temperature coefficient VCEsat\n• Temp;

Infineon

英飞凌

Power-Discrete IGBT without Anti-Parallel Diode

The 650 V, 50 A high speed switching TRENCHSTOP™ 5 in D2Pak (TO263) package single  IGBT, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. • Very low VCEsatof 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5\n• IC(n)=four times nominal current (100°C Tc)\n• Soft current fall characteristics with no tail current\n• Symmetrical, low voltage overshoot\n• Gate voltage under control (no oscillation). No risk of unwanted turn-onof device ;

Infineon

英飞凌