IGB50N65S5中文资料Power-Discrete IGBT without Anti-Parallel Diode数据手册Infineon规格书

描述 Description

The 650 V, 50 A high speed switching TRENCHSTOP™ 5 in D2Pak (TO263) package single  IGBT, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

特性 Features

• Very low VCEsatof 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5
• IC(n)=four times nominal current (100°C Tc)
• Soft current fall characteristics with no tail current
• Symmetrical, low voltage overshoot
• Gate voltage under control (no oscillation). No risk of unwanted turn-onof device and no need for gate clamping
• Maximum junction temperature Tvj=175°C
• Qualified according to JEDEC standards

优势:
• VCE(peak) clamping circuits not required
• Suitable for use with single turn-on / turn-off gate resistor
• No need for gate clamping components
• Gate drivers with Miller clamping not required
• Reduction in the EMI filtering needed
• Excellent for paralleling