IGB20N65S5中文资料650 V、20 A IGBT，带反并联二极管，采用 TO263 封装数据手册Infineon规格书

描述 Description

The 650 V, 20 A high speed switching TRENCHSTOP™ 5 in D2Pak (TO263) package single  IGBT, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

特性 Features

• Very low VCEsatof 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5
• IC(n)=four times nominal current (100°C Tc)
• Soft current fall characteristics with no tail current
• Symmetrical, low voltage overshoot
• Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
• Maximum junction temperature Tvj=175°C
• Qualified according to JEDEC standards

优势:
• VCE(peak) clamping circuits not required
• Suitable for use with single turn-on / turn-off gate resistor
• No need for gate clamping components
• Gate drivers with Miller clamping not required
• Reduction in the EMI filtering needed
• Excellent for paralleling

简介

IGB20N65S5属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IGB20N65S5晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。