650 V、20 A IGBT，带反并联二极管，采用 TO263 封装

The 650 V, 20 A high speed switching TRENCHSTOP™ 5 in D2Pak (TO263) package single  IGBT, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. • Very low VCEsatof 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5\n• IC(n)=four times nominal current (100°C Tc)\n• Soft current fall characteristics with no tail current\n• Symmetrical, low voltage overshoot\n• Gate voltage under control (no oscillation). No risk of unwanted turn-on of device;

Infineon

英飞凌

丝印：G20ES5；Package：PG-TO263-3；High speed switching series fifth generation

文件：1.36373 Mbytes 页数：14 Pages

INFINEON

英飞凌

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT PRODUCTS

INFINEON

英飞凌

TO-263

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上传：深圳市汇创佳电子科技有限公司

IPM模块

INFINEON/英飞凌

上传：深圳市正纳电子有限公司