IGB20N60H3中文资料采用 TO263 D2Pak 封装的 600 V、20 A IGBT3数据手册Infineon规格书

描述 Description

High speed 600 V, 20 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

特性 Features

• Low switching losses for high efficiency
• Excellent Vce(sat)behavior thanks to the famous Infineon TRENCHSTOP™ technology
• Fast switching behavior with low EMI emissions
• Optimized diode for target applications, meaning further improvement in switching losses
• Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
• Short circuit capability 5µs
• Offering Tj(max)of 175°C
• Packaged with and without freewheeling diode for increased design freedom

优势:
• Low switching and conduction losses
• Very good EMI behavior
• Can be used with a small gate resistor for reduced delay time and voltage overshoot
• High current density
• Best-in-class 600 V IGBT efficiency and EMI behavior