Power-Discrete IGBT without Anti-Parallel Diode

The 650 V, 50 A high speed switching TRENCHSTOP™ 5 in D2Pak (TO263) package single  IGBT, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. • Very low VCEsatof 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5\n• IC(n)=four times nominal current (100°C Tc)\n• Soft current fall characteristics with no tail current\n• Symmetrical, low voltage overshoot\n• Gate voltage under control (no oscillation). No risk of unwanted turn-onof device ;

Infineon

英飞凌

丝印：G50ES5；Package：PG-TO263-3；High speed switching series fifth generation

文件：1.35654 Mbytes 页数：14 Pages

INFINEON

英飞凌

IPM模块

INFINEON/英飞凌

上传：深圳市正纳电子有限公司

IPM模块

INFINEON/英飞凌

上传：深圳市正纳电子有限公司

IGBT

INFINEON/英飞凌

上传：深圳市赛特兴科技有限公司