丝印：GT060N04；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT060N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：743.71 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT060N04；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT060N04D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.05726 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT060N04；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT060N04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.00591 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT060N04；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT060N04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：635.03 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT060N04；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT060N04KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：635.22 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT060N04；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT060N04T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：991.66 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT060N04D；Package：DFN5X6-8LDUAL；Dual N-Channel Enhancement Mode Power MOSFET

Description The GT060N04D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：960.43 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT060N04D；Package：DFN5x6-8LDual；Dual N-Channel Enhancement Mode Power MOSFET

Description The GT060N04D52A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：867.6 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT060N04；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT060N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：743.71 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT060N04；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT060N04D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.05726 Mbytes 页数：6 Pages

GOFORD

谷峰半导体