丝印：GT060N04；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT060N04T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：991.66 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF060N04NG combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .This device is ideal for load switch and battery protection applications. ● Features Advance high cell density Trench technology Low RDS(ON) to

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TUOFENG

拓锋半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT060N04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：635.03 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT060N04KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：635.22 Kbytes 页数：6 Pages

GOFORD

谷峰半导体