丝印：GT02；SAW Bandpass Filters | Wireless Communications

Features  868.6 MHz center frequency  Ceramic package for Surface Mounted Technology  Low Loss: 2.6 dB typical value within PassBand Width 868 to 870 MHz  Good rejections specially for the LTE band and the UMTS band  Maximum pulse power: 27 dBm Applications  Remote control - RF  W

文件：496.53 Kbytes 页数：7 Pages

RAKON

丝印：GT020N04A；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT020N04D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：923.84 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT020N10；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT020N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.04406 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT020N10；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT020N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.07831 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT023N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：950.3 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT023N10；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：924.7 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT023N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：886.98 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT023N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：944 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT023N10；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：992.28 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT023N10；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.11145 Mbytes 页数：6 Pages

GOFORD

谷峰半导体