首页 >GDA630MA>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

IRF630

N-channelTrenchMOStransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF630

FIELDEFFECTPOWERTRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF630A

iscN-ChannelMOSFETTransistor

DESCRIPTION •DrainCurrent–ID=9A@TC=25℃ •DrainSourceVoltage- :VDSS=200V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) •FastSwitchingSpeed •LowDriveRequirement APPLICATIONS •Thisdeviceisn-channel,enhancementmode,powerMOSFET designedespecia

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF630A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.333Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingKersemiproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighe

KERSEMI

Kersemi Electronic Co., Ltd.

IRF630B

N-ChannelMOSFETTransistor

DESCRIPTION •DrainCurrent–ID=9A@TC=25℃ •DrainSourceVoltage- :VDSS=200V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) •FastSwitchingSpeed APPLICATIONS •DesingedforhighefficiencyswitchingDC/DCconverters, switchmodepowersupplies,DC-ACconver

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF630B

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent–ID=9A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·FastSwitchingSpeed ·LowDriveRequirement ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·This

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF630F

N-channelmosfettransistor

♦Features ·WithTO-220Fpackage ·Lowon-stateandthermalresistance ·Fastswitching ·VDSS=200V;RDS(ON)≤0.4Ω;ID=9A ·1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF630FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.25Ω ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACHTERIZATION APPLICATIONS ■HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCO

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

IRF630FI

iscN-ChannelMOSFETTransistor

•DESCRITION •Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. •FEATURES •RDS(on)=0.4Ω •6Aand200V •singlepulseavalancheenergyrated •SOAisPower-DissipationLimited •LinearTransfer

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF630FP

N-CHANNEL200V-0.35ihm-9A-TO-220/FPMESHOVERLAY]MOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. Generalfeatures ■Extremelyhighdv/dtcapability ■Verylowintrinsic

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

IRF630FP

N-channel200V-0.35廓-9ATO-220/TO-220FPMeshoverlay??IIPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

IRF630M

N-channel200V-0.35廓-9A-TO-220/TO-220FPMeshOverlay??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

IRF630M

N-CHANNEL200V-0.35W-9ATO-220/TO-220FPMESHOVERLAYMOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

IRF630MFP

N-CHANNEL200V-0.35W-9ATO-220/TO-220FPMESHOVERLAYMOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

IRF630MFP

N-channel200V-0.35廓-9A-TO-220/TO-220FPMeshOverlay??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

IRF630MFP

N-Channel200V(D-S)MOSFET

FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) •SinktoLeadCreepageDistance=4.8mm •175°COperatingTemperature •DynamicdV/dtRating •LowThermalResistance •Lead(Pb)-freeAvailable

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

IRF630N

iscN-ChannelMOSFETTransistor

•DESCRITION •Efficientandreliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableop

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF630N

PowerMOSFET

TEL

TRANSYS Electronics Limited

详细参数

  • 型号:

    GDA630MA

  • 制造商:

    Cooper Bussmann

  • 功能描述:

    FUSE CARTRIDGE 630mA 5X20MM FAST ACT

  • 功能描述:

    FUSE, CARTRIDGE, 630mA, 5X20MM, FAST ACT

  • 功能描述:

    FUSE, CARTRIDGE, 630mA, 5X20MM, FAST ACT; Voltage Rating

  • VAC:

    250V; Fuse

  • Current:

    630mA; Breaking

  • Capacity:

    1.5kA @ 250VAC; Fuse Size

  • Metric:

    5mm x 20mm; Blow

  • Characteristic:

    Fast Acting;

  • Series:

    GDA; Current

  • Rating:

    630mA;

  • Diameter:

    5mm ;RoHS

  • Compliant:

    No

  • Metric:

    5mm x 20mm; Fuse Size

  • Imperial:

    (Not Applicable); Blow

  • Series:

    GDA ;RoHS

  • Imperial:

    -; Blow

  • Series:

    GDA;

供应商型号品牌批号封装库存备注价格
BUSSMANN
137
原装正品长期供货,如假包赔包换 徐小姐13714450367
询价
BUSSMANN
最新
137
原装正品 现货供应 价格优
询价
BUSSMANN
23+
589610
新到现货 原厂一手货源 价格秒杀代理!
询价
COOPER
17+
原厂原封
4000
原装正品
询价
Eaton
22+
NA
168
加我QQ或微信咨询更多详细信息,
询价
Carlo Gavazzi Inc.
2022+
原厂封装
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
EATON(伊顿)
2112+
5mmx20mm
115000
5个/袋一级代理专营品牌!原装正品,优势现货,长期排
询价
KYCON
320
全新原装 货期两周
询价
KYCON
06+
原厂原装
5664
只做全新原装真实现货供应
询价
COMAIR
21+ROHS
FAN
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多GDA630MA供应商 更新时间2024-6-15 14:30:00