| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-channelTrenchMOStransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
FIELDEFFECTPOWERTRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •DrainCurrent–ID=9A@TC=25℃ •DrainSourceVoltage- :VDSS=200V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) •FastSwitchingSpeed •LowDriveRequirement APPLICATIONS •Thisdeviceisn-channel,enhancementmode,powerMOSFET designedespecia | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.333Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingKersemiproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighe | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelMOSFETTransistor DESCRIPTION •DrainCurrent–ID=9A@TC=25℃ •DrainSourceVoltage- :VDSS=200V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) •FastSwitchingSpeed APPLICATIONS •DesingedforhighefficiencyswitchingDC/DCconverters, switchmodepowersupplies,DC-ACconver | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainCurrent–ID=9A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·FastSwitchingSpeed ·LowDriveRequirement ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·This | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channelmosfettransistor ♦Features ·WithTO-220Fpackage ·Lowon-stateandthermalresistance ·Fastswitching ·VDSS=200V;RDS(ON)≤0.4Ω;ID=9A ·1.gate2.drain3.source | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.25Ω ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACHTERIZATION APPLICATIONS ■HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCO | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor •DESCRITION •Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. •FEATURES •RDS(on)=0.4Ω •6Aand200V •singlepulseavalancheenergyrated •SOAisPower-DissipationLimited •LinearTransfer | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNEL200V-0.35ihm-9A-TO-220/FPMESHOVERLAY]MOSFET Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. Generalfeatures ■Extremelyhighdv/dtcapability ■Verylowintrinsic | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel200V-0.35廓-9ATO-220/TO-220FPMeshoverlay??IIPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel200V-0.35廓-9A-TO-220/TO-220FPMeshOverlay??PowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL200V-0.35W-9ATO-220/TO-220FPMESHOVERLAYMOSFET Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL200V-0.35W-9ATO-220/TO-220FPMESHOVERLAYMOSFET Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel200V-0.35廓-9A-TO-220/TO-220FPMeshOverlay??PowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-Channel200V(D-S)MOSFET FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) •SinktoLeadCreepageDistance=4.8mm •175°COperatingTemperature •DynamicdV/dtRating •LowThermalResistance •Lead(Pb)-freeAvailable | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor •DESCRITION •Efficientandreliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableop | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | TEL TRANSYS Electronics Limited | TEL |
详细参数
- 型号：
GDA630MA
- 制造商：
Cooper Bussmann
- 功能描述：
FUSE CARTRIDGE 630mA 5X20MM FAST ACT
- 功能描述：
FUSE, CARTRIDGE, 630mA, 5X20MM, FAST ACT
- 功能描述：
FUSE, CARTRIDGE, 630mA, 5X20MM, FAST ACT; Voltage Rating
- VAC：
250V; Fuse
- Current：
630mA; Breaking
- Capacity：
1.5kA @ 250VAC; Fuse Size
- Metric：
5mm x 20mm; Blow
- Characteristic：
Fast Acting;
- Series：
GDA; Current
- Rating：
630mA;
- Diameter：
5mm ;RoHS
- Compliant：
No
- Metric：
5mm x 20mm; Fuse Size
- Imperial：
(Not Applicable); Blow
- Series：
GDA ;RoHS
- Imperial：
-; Blow
- Series：
GDA;
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BUSSMANN |
137 |
原装正品长期供货，如假包赔包换 徐小姐13714450367 |
询价 | ||||
BUSSMANN |
最新 |
137 |
原装正品 现货供应 价格优 |
询价 | |||
BUSSMANN |
23+ |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 | |||
COOPER |
17+ |
原厂原封 |
4000 |
原装正品 |
询价 | ||
Eaton |
22+ |
NA |
168 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
Carlo Gavazzi Inc. |
2022+ |
原厂封装 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
EATON(伊顿) |
2112+ |
5mmx20mm |
115000 |
5个/袋一级代理专营品牌!原装正品,优势现货,长期排 |
询价 | ||
KYCON |
新 |
320 |
全新原装 货期两周 |
询价 | |||
KYCON |
06+ |
原厂原装 |
5664 |
只做全新原装真实现货供应 |
询价 | ||
COMAIR |
21+ROHS |
FAN |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
相关规格书
更多- GDA-630MA
- GD-A-64
- GD-A-66
- GDA-800MA
- GDA8025-24BB
- GD-A-88
- GD-A-88K
- GDA-8A
- GDA9225-24BB
- GDA95D
- GDAI-A548WJ3A
- GDAK15PA156
- GDA-V-1.6A
- GDA-V-10A
- GDA-V-160MA
- GDA-V-2.5A
- GDA-V250
- GDA-V-2A
- GDB60801Z
- GDB61153Z
- GDB61753Z
- GDB630MA
- GDB63101Z
- GDBAS16
- GDBAS70
- GDBD4410
- GDBE-25S-A156
- GDB-V-1.6A
- GDB-V-10A
- GDB-V-160MA
- GDB-V-200MA
- GDB-V-2A
- GDB-V-400MA
- GDB-V-500MA
- GDB-V-5A
- GDB-V-630MA
- GDB-V-800MA
- GDB-V-8A
- GD-C1
- GDC-1.25A
- GDC-100MA
- GDC-100MA-BK
- GDC111646-18
- GDC21D301A
- GDC21D601
相关库存
更多- GDA63A
- GD-A-64-50
- GD-A-66-50
- GDA8025-12BB
- GDA-80MA
- GD-A-88-50
- GD-A-88K-50
- GDA9225-12BB
- GDA95A
- GDAI-1084CESK
- GDAK-15P
- GDAK-15P-A156
- GDA-V-100MA
- GDA-V-125MA
- GDA-V-1A
- GDA-V-200MA
- GDA-V-250MA
- GDB-6.3A
- GDB61151Z
- GDB61601Z
- GDB630
- GDB-630MA
- GDB63A
- GDBAS40
- GDBAT54
- GDBE111630-19
- GDB-V-1.25A
- GDB-V-100MA
- GDB-V-125MA
- GDB-V-2.5A
- GDB-V-250MA
- GDB-V-32MA
- GDB-V-4A
- GDB-V-50MA
- GDB-V-6.3A
- GDB-V-63MA
- GDB-V-80MA
- GDBY-25S-A156
- GDC-1
- GDC-1.6A
- GDC100MABK
- GDC-10A
- GDC111646-24
- GDC21D401B
- GDC21D701C
