丝印：GC11N65；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：742.8 Kbytes 页数：6 Pages

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谷峰半导体

丝印：GC11N65；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.01237 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC11N65；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.28811 Mbytes 页数：6 Pages

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谷峰半导体

丝印：GC11N65；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.07184 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC11N70；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC11N70F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：765.67 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC11N70；Package：TO-220F；Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 页数：9 Pages

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谷峰半导体

丝印：GC11N70；Package：TO-251；Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 页数：9 Pages

GOFORD

谷峰半导体

丝印：GC11N70；Package：TO-252；Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 页数：9 Pages

GOFORD

谷峰半导体

丝印：GC11N70；Package：TO-220；Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 页数：9 Pages

GOFORD

谷峰半导体

丝印：GC120N65；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GC120N65QF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.14606 Mbytes 页数：6 Pages

GOFORD

谷峰半导体