丝印：GC120N65；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GC120N65QF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.14606 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

Multi-epi SJ mos

GOFORD

谷峰半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 24mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive ·AC and DC Motor Drives

文件：328.27 Kbytes 页数：2 Pages

ISC

无锡固电

TSSOP16-EP

世芯

上传：深圳市钧敏科技有限公司

SOP-8

GC

上传：深圳市赛尔通科技有限公司