isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 24mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive ·AC and DC Motor Drives

文件：328.27 Kbytes 页数：2 Pages

ISC

无锡固电

Preliminary Technical Information

文件：202.86 Kbytes 页数：5 Pages

IXYS

艾赛斯

N通道 超-超级结MOSFET

• 超低通态电阻RDS(ON)和栅极电荷Qg\n• 快速体二极管\n• dv/dt强度\n• 雪崩评级\n• 较低的封装电感\n• 国际标准包装;

Littelfuse

力特

N-Channel Enhancement Mode Power MOSFET

Description The GC120N65QF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.14606 Mbytes 页数：6 Pages

GOFORD

谷峰半导体