G20N120RUF规格书应用电路库存现货Motorola-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
20N120C	文件：820.86 Kbytes Page：9 Pages	Generalpurposeinverters	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD.	JSMC
BRG20N120D	文件：769.26 Kbytes Page：6 Pages	Insulated-GateBipolarTransistorinaTO-3PPlasticPackage	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司	FOSHAN
FGA20N120FTD	文件：721.12 Kbytes Page：9 Pages	1200V,20ATrenchIGBT	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGA20N120FTDTU	文件：721.12 Kbytes Page：9 Pages	1200V,20ATrenchIGBT	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
G20N120	文件：167.55 Kbytes Page：5 Pages	34A,1200VN-ChannelIGBT Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
G20N120	文件：93.09 Kbytes Page：7 Pages	63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
G20N120	文件：97.79 Kbytes Page：8 Pages	45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETs andbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlos	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
G20N120	文件：83.76 Kbytes Page：7 Pages	63A,1200V,NPTSeriesN-ChannelIGBT 63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
G20N120	文件：121.05 Kbytes Page：8 Pages	63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGH20N120A	文件：1.01653 Mbytes Page：5 Pages	N-ChannelEnhancementInsulatedGateBipolarTransistor Features •Lowsaturationvoltage,Vce(on)(typ)=2.3V@Vge=15V •Highinputimpedance •Fieldstoptrenchtechnologyoffersuperior conductionandswitchingperformances, •Highspeedswitching Applications •InductionheatingandMicrowaveoven •Softswitchingapplications	HuashanHuashan Electronic Devices Co 华汕电子器件	Huashan
HGTG20N120	文件：167.55 Kbytes Page：5 Pages	34A,1200VN-ChannelIGBT Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG20N120CN	文件：83.76 Kbytes Page：7 Pages	63A,1200V,NPTSeriesN-ChannelIGBT 63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG20N120CND	文件：93.09 Kbytes Page：7 Pages	63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG20N120CND	文件：121.05 Kbytes Page：8 Pages	63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HM20N120AB	文件：804.31 Kbytes Page：8 Pages	KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
HM20N120T	文件：968.93 Kbytes Page：9 Pages	H&MNPTIGBTsofferlowerlossesandhigherenergy	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
HM20N120TB	文件：813.96 Kbytes Page：8 Pages	KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
IHW20N120R	文件：201.5 Kbytes Page：10 Pages	HighSpeed2-Technology •Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IHW20N120R	文件：358.29 Kbytes Page：12 Pages	ReverseConductingIGBTwithmonolithicbodydiode Features: •PowerfulmonolithicBodyDiodewithverylowforwardvoltage •Bodydiodeclampsnegativevoltages •TrenchandFieldstoptechnologyfor1200Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior •NPTtechnologyoffers	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IXDA20N120AS	文件：54.05 Kbytes Page：4 Pages	HighVoltageIGBT HighVoltageIGBT ShortCircuitSOACapabilitySquareRBSOA Features ●NPTIGBTtechnology ●highswitchingspeed ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●Internationalstandardp	IXYS IXYS Integrated Circuits Division	IXYS

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市赛尔通科技有限公司	G20N120RUF		23+	TO-3P	65480		询价
深圳市河锋鑫科技有限公司	G20N20	GOFORD	2022+	TO-251252	50000	原厂代理终端免费提供样品	询价
深圳市创新迹电子有限公司	G20N20	GOFORD	2022+	TO-251252	30000	进口原装现货供应,原装假一罚十	询价
深圳市博浩通科技有限公司	G20N40	进口原装	23+	TO-252	16390	全新原装现货	询价
贸泽芯城（深圳）电子科技有限公司	G20N40FV3L	HARRIS/哈里斯	21+ROHS	09	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市莱克讯科技有限公司	G20N40L	FAI	2017+	TO252	35689	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市科恒伟业电子有限公司	G20N40L	FAI	2018+	TO252	6528	只做原装正品假一赔十!只要网上有上百分百有库存放心	询价
深圳市纳艾斯科技有限公司	G20N40L	SANYO	2020+	TO-252	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市粤骏腾电子科技有限公司	G20N40L	HARRIS/哈里斯	2020+	TO220	12500	原装正品现货	询价
深圳鹏芯半导体科技(集团)有限公司	G20N40L	HARRIS/哈里斯	08+	TO220	2663	绝对原装正品有货	询价

更多G20N120RUF供应商更新时间2024-5-1 14:10:00

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