High Performance E2CMOS PLD Generic Array Logic

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

文件：386.45 Kbytes 页数：29 Pages

Lattice

莱迪思

High Performance E2CMOS PLD Generic Array Logic

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

文件：386.45 Kbytes 页数：29 Pages

Lattice

莱迪思

In-System Programmable E2CMOS PLD

文件：247.13 Kbytes 页数：15 Pages

Lattice

莱迪思

Highperformance EE PLD

文件：537.18 Kbytes 页数：15 Pages

Atmel

爱特梅尔

High- Performance EE PLD

Description The Atmel® ATF22V10B is a high-performance CMOS (electrically erasable) programmable logic device (PLD) which utilizes the Atmel proven electrically erasable Flash memory technology. Speeds down to 7.5ns and power dissipation as low as 10mA are offered. All speed ranges are specified

文件：886.31 Kbytes 页数：14 Pages

Atmel

爱特梅尔

High- Performance EE PLD

Description The Atmel® ATF22V10B is a high-performance CMOS (electrically erasable) programmable logic device (PLD) which utilizes the Atmel proven electrically erasable Flash memory technology. Speeds down to 7.5ns and power dissipation as low as 10mA are offered. All speed ranges are specified

文件：886.31 Kbytes 页数：14 Pages

Atmel

爱特梅尔