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GAL22V10D-25LP

GAL 22V10 Device Datasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10D-25LP

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10D-25LP

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10D-25LP

All Devices Discontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10D-25LP

All Devices Discontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10D-25LP

包装:散装 封装/外壳:24-DIP(0.300",7.62mm) 类别:集成电路(IC) CPLD(复杂可编程逻辑器件) 描述:IC CPLD 10MC 25NS 24DIP

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10D-25LPI

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10D-25LPI

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10D-25LPI

GAL 22V10 Device Datasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10D-25LPN

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10D-25LPN

GAL 22V10 Device Datasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10D-25LPNI

GAL 22V10 Device Datasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10D-25LPNI

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10D-25LPI

All Devices Discontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10D-25LPI

All Devices Discontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10D-25LPN

All Devices Discontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10D-25LPN

All Devices Discontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10D-25LPNI

All Devices Discontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10D-25LPNI

All Devices Discontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

GAL22V10D-25LPN

包装:管件 封装/外壳:24-DIP(0.300",7.62mm) 类别:集成电路(IC) CPLD(复杂可编程逻辑器件) 描述:IC CPLD 10MC 25NS 24DIP

LatticeLattice Semiconductor Corporation

莱迪思半导体

Lattice

产品属性

  • 产品编号:

    GAL22V10D-25LP

  • 制造商:

    Lattice Semiconductor Corporation

  • 类别:

    集成电路(IC) > CPLD(复杂可编程逻辑器件)

  • 系列:

    GAL®22V10

  • 包装:

    散装

  • 可编程类型:

    EE PLD

  • 供电电压 - 内部:

    4.75V ~ 5.25V

  • 工作温度:

    0°C ~ 75°C(TA)

  • 安装类型:

    通孔

  • 封装/外壳:

    24-DIP(0.300",7.62mm)

  • 供应商器件封装:

    24-PDIP

  • 描述:

    IC CPLD 10MC 25NS 24DIP

供应商型号品牌批号封装库存备注价格
LATTI
5632
2015
只做进口原装正品!现货或者订货一周货期!只要要网上
询价
LATTICE/莱迪斯
21+
DIP24
9080
只做原装,质量保证
询价
LATTICE/莱迪斯
22+
DIP24
390000
只有原装正品
询价
Lattice(莱迪斯)
23+
标准封装
75936
原厂渠道供应,大量现货,原型号开票。
询价
LATTICE
18+
DIP24
9860
一级代理/全新现货/长期供应!
询价
04+
DIP
30
原装正品现货
询价
Lattice(莱迪斯)
22+
特价
6000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
LATTICE
2022+
DIP24
4000
原装原厂代理 可免费送样品
询价
LATTICE/莱迪斯
23+
DIP
98900
原厂原装正品现货!!
询价
LATTICE/莱迪斯
22+
DIP
98900
公司只有原装
询价
更多GAL22V10D-25LP供应商 更新时间2024-4-25 16:46:00