丝印：G12；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK1399 is an N-channel vertical type MOS FET can be driven by 2.5 V power supply. The 2SK1399 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances includ

文件：246.97 Kbytes 页数：7 Pages

RENESAS

瑞萨

丝印：G12；Package：SMT6；Emitter common(dual digital transistors)

Features 1) Include two DTC323T transistors in a single SMT package. 2) Low VCE(sat). Ideal for muting circuit. 3) Can be used with IC = 600 mA

文件：41 Kbytes 页数：1 Pages

ROHM

罗姆

丝印：G12；Package：SOT-23；Plastic-Encapsulate Diodes

FEATURES  Bi-directional ESD protection of two lines  Low reverse stand−off voltage: 12V  Low reverse clamping voltage  Low leakage current  Fast response time  JESD22-A114-B ESD Rating of class 3B per human body model  IEC 61000-4-2 Level 4 ESD protection DESCRIPTION Low capacit

文件：4.43571 Mbytes 页数：4 Pages

GWSEMI

唯圣电子

丝印：G12；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：G12；Package：DFN；Fixed and Adjustable Current Limiting Power Distribution Switches

文件：3.94238 Mbytes 页数：38 Pages

Microchip

微芯科技

丝印：G120N02；Package：DFN3X3-8LDual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G120N02D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.09697 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G120N03；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The G120N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：717.41 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G120N03；Package：DFN3X3-8LDual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G120N03D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：788.9 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G120P03；Package：SOP-8Dual；DUAL P-Channel Enhancement Mode Power MOSFET

Description The G120P03S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：830.93 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G120P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G120P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：599.26 Kbytes 页数：6 Pages

GOFORD

谷峰半导体