丝印：G030N06；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The G030N06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：991.91 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G030N06；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G030N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.03394 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G030N06；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The G030N06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：991.91 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G030N06；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G030N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.03394 Mbytes 页数：6 Pages

GOFORD

谷峰半导体