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G030N06M

Marking:G030N06;Package:TO-263;N-Channel Enhancement Mode Power MOSFET

Description TheG030N06Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

G030N06T

Marking:G030N06;Package:TO-220;N-Channel Enhancement Mode Power MOSFET

Description TheG030N06Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

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