丝印：G030N06；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The G030N06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：991.91 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

Trench Mosfet

GOFORD

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4V Drive Nch MOSFET

■ MOSFETs ● Small Signal MOSFET Series ● Middle Power MOSFET Series ● Power MOSFET Series ■ Selector Guide for Automotive MOSFETs (AEC-Q101) ■ Bipolar Transistors (Surface mount type) ■ Transistor Array ■ Complex Bipolar Transistors ■ Digital Transistors ■ Complex Digital Transis

文件：223.57 Kbytes 页数：5 Pages

ROHM

罗姆

Nch 60V 3A Power MOSFET

文件：592.51 Kbytes 页数：12 Pages

ROHM

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Nch 60V 3A Power MOSFET

文件：785.24 Kbytes 页数：14 Pages

ROHM

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