丝印：G030N06；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The G030N06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：991.91 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

Trench Mosfet

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The G030N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.03394 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 29.7 m, 19 A

文件：252.45 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, 8FL 60 V, 29.7 m, 19 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Tools, Battery Operated Vacuum

文件：212.12 Kbytes 页数：7 Pages

ONSEMI

安森美半导体