G08N02L

Marking：G08N02；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description TheG08N02LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. Application ⚫Powerswitch ⚫DC/DCconverters

G08N03D2

Marking：G08N03；Package：DFN22；N-Channel Enhancement Mode Power MOSFET

Description TheG08N03D2usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. Application ⚫Powerswitch ⚫DC/DCconverters

G08N06S

Marking：G08N06；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description TheG08N06Susesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G08P06D3

Marking：G08P06；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description TheG08P06D3usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G08P06D3A

Marking：G08P06；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description TheG08P06D3Ausesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G090P02S

Marking：G090P02；Package：SOP-8；P-Channel Trench MOSFET

Description TheG090P02Susesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G09N06S2

Marking：G09N06；Package：SOP-8Dual；DUAL N-Channel Trench MOSFET

Description TheG09N06S2usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. Application ⚫Powerswitch ⚫DC/DCconverters

G09P02L

Marking：G09P02；Package：SOT-23-3L；P-Channel Enhancement Mode Power MOSFET

Description TheG09P02Lusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

IGA03N120H2

Marking：G03H1202；Package：PG-TO-220-3-31；HighSpeed 2-Technology

•Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

IGD01N120H2

Marking：G01H1202；Package：PG-TO-252-3-11；HighSpeed 2-Technology

HighSpeed2-Technology •Designedfor: -SMPS -LampBallast -ZVS-Converter -optimisedforsoft-switching/resonanttopologies •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitching