丝印：G01P15；Package：SOT-23-3L；P-Channel Enhancement Mode Power MOSFET

Description The G01P15L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：634.78 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G01P15；Package：SOT-23-6L；P-Channel Trench MOSFET

Description The G01P15LL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：606.58 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G01P15；Package：SOT-23-3L；P-Channel Enhancement Mode Power MOSFET

Description The G01P15L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：634.78 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G01P15；Package：SOT-23-6L；P-Channel Trench MOSFET

Description The G01P15LL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：606.58 Kbytes 页数：6 Pages

GOFORD

谷峰半导体