丝印：G020N03；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The G020N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：731.77 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G020N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G020N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：887.18 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G020N03；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G020N03T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.01221 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G020N03；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The G020N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：731.77 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G020N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G020N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：887.18 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G020N03；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G020N03T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.01221 Mbytes 页数：6 Pages

GOFORD

谷峰半导体