丝印：G02P06；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G02P06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：850.72 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G02P06；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G02P06A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.0548 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G02P06；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G02P06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：850.72 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G02P06；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G02P06A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.0548 Mbytes 页数：6 Pages

GOFORD

谷峰半导体