丝印：G020N03；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G020N03T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.01221 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

MOSFET ??Power, Single, N-Channel, Cool, UDFN6, 1.6x1.6x0.55 mm 30 V, 13 m, 8.2 A

文件：205.8 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single, N-Channel, Cool, UDFN6, 1.6x1.6x0.55 mm 30 V, 13 m, 8.2 A

文件：205.8 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

4V Drive Nch MOSFET

■ MOSFETs ● Small Signal MOSFET Series ● Middle Power MOSFET Series ● Power MOSFET Series ■ Selector Guide for Automotive MOSFETs (AEC-Q101) ■ Bipolar Transistors (Surface mount type) ■ Transistor Array ■ Complex Bipolar Transistors ■ Digital Transistors ■ Complex Digital Transis

文件：69.15 Kbytes 页数：5 Pages

ROHM

罗姆