丝印：G01N20；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The G01N20LE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：827.97 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G01N20；Package：TO-92；N-Channel Enhancement Mode Power MOSFET

Description The G01N20RE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：922.38 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G01N20；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The G01N20LE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：827.97 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G01N20；Package：TO-92；N-Channel Enhancement Mode Power MOSFET

Description The G01N20RE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：922.38 Kbytes 页数：6 Pages

GOFORD

谷峰半导体