isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.4A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =6.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：302.73 Kbytes 页数：2 Pages

ISC

无锡固电

900V N-Channel MOSFET

Features • 2.2A, 900V, RDS(on) = 7.2Ω @VGS = 10 V • Low gate charge ( typical 12 nC) • Low Crss ( typical 5.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：744.62 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：698.23 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N 沟道 QFET® MOSFET

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。 这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。 这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •1.8 A、400 V、RDS(on) = 5.8 Ω（最大值）@ VGS = 10 V、ID = 0.9 A•\n•低栅极电荷（典型值 4.0 nC)\n•低 Crss（典型值 3.0 pF)\n•快速开关\n•100% 经过雪崩击穿测试\n•提高了 dv/dt 性能;

ONSEMI

安森美半导体

500V N-Channel MOSFET

ONSEMI

安森美半导体

600V N-Channel MOSFET

ONSEMI

安森美半导体