900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：688.14 Kbytes 页数：8 Pages

FAIRCHILD

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900V N-Channel MOSFET

ONSEMI

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900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：675.74 Kbytes 页数：8 Pages

FAIRCHILD

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Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 μA (Max.) @ VDS = 900V ■ Low RDS(ON) : 4.679 Ω (Typ.)

文件：260.57 Kbytes 页数：7 Pages

FAIRCHILD

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Advanced Power MOSFET

文件：187.12 Kbytes 页数：7 Pages

FAIRCHILD

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