150V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：927.29 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=45A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =40mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：301.96 Kbytes 页数：2 Pages

ISC

无锡固电

功率 MOSFET，N 沟道，QFET®，150 V，45 A，40 mΩ，TO-220

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •45A, 150V, RDS(on)= 40mΩ（最大值）@VGS = 10 V, ID = 22.5A栅极电荷低（典型值：72nC)\n•低 Crss（典型值135pF)\n•100% 经过雪崩击穿测试\n•175°C最大结温额定值\"\n• 175°C maximum junction temperature rating;

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=45A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.04Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：278 Kbytes 页数：2 Pages

ISC

无锡固电

150V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：927.29 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司