isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.0A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：301.6 Kbytes 页数：2 Pages

ISC

无锡固电

500V N-Channel MOSFET

文件：1.26958 Mbytes 页数：10 Pages

Fairchild

仙童半导体

N 沟道 QFET® MOSFET

这些 N 沟道增强型功率场效应晶体管采用飞兆专有的平面条形 DMOS 技术生产。这一先进技术是专为最大限度地降低导通电阻，提供卓越的开关性能，以及在雪崩击穿和换相情况下承受高能量脉冲而开发的。这些器件非常适合高效开关电源、功率因数校正和半桥拓扑的电子灯整流器。 •3 A，500 V，RDS(on) = 2.5 Ω（最大值），条件是 VGS = 10 V\n•低栅极电荷（典型值10 nC)\n•低 Crss（典型值8.5 pF)\n•快速开关\n•100% 经过雪崩击穿测试\n•提高了 dv/dt 性能;

ONSEMI

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500V N-Channel MOSFET

文件：1.26958 Mbytes 页数：10 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：277.68 Kbytes 页数：2 Pages

ISC

无锡固电

500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：1.04346 Mbytes 页数：9 Pages

Fairchild

仙童半导体