900V N-Channel MOSFET

Features • 2.2A, 900V, RDS(on) = 7.2Ω @VGS = 10 V • Low gate charge ( typical 12 nC) • Low Crss ( typical 5.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：744.62 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

功率 MOSFET，N 沟道，QFET®，900 V，2.2 A，7.2 Ω，TO-220

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •2.2A, 900V, RDS(on)= 7.2Ω（最大值）@VGS = 10 V, ID = 1.1A栅极电荷低（典型值：12nC)\n•低 Crss（典型值5.5pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体

900V N-Channel MOSFET

Features • 1.4A, 900V, RDS(on) = 7.2Ω @ VGS =10V • Low gate charge (typical 12 nC) • Low Crss (typical 5.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：732.11 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

900V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：750.31 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

文件：258.67 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体