丝印：FQA24N50；Package：TO-3PN；N-Channel QFET® MOSFET 500 V, 24 A, 200 mΩ

Features • 24 A, 500 V, RDS(on) = 200 mΩ (Max.) @ VGS = 10 V, ID = 12 A • Low Gate Charge (Typ. 90 nC) • Low Crss (Typ. 55 pF) • 100% Avalanche Tested • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietar

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ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=24A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

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ISC

无锡固电

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：734.41 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

功率 MOSFET，N 沟道，QFET®，500 V，24 A，200 mΩ，TO-3P

此类 N 沟道增强型电场效应晶体管是使用 Fairchild 的平面条纹和 DMOS 专属技术生产的。此先进技术特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件非常适用于高效开关模式电源、功率系数校正、基于半桥的电子灯镇流器。 •24 A、500 V、RDS(on) = 200 mΩ（最大值）（VGS = 10 V、ID = 12 A）\n•低栅极电荷（典型值 90 nC)\n•低 Crss（典型值 55 pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

ONSEMI

安森美半导体

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：620.06 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

• FEATURES • With TO-3PN packaging • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • Switching applications

文件：323.65 Kbytes 页数：2 Pages

ISC

无锡固电