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FQA28N15

Isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.09Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FQA28N15

150V N-Channel MOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQA28N15

150V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQA28N15_07

150V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQA28N15_F109

150V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FKD28N15

N-Ch150VFastSwitchingMOSFETs

Description TheFKD28N15isthehighestperformance trenchN-chMOSFETswithextremehighcell density,whichprovideexcellentRDSONandgate chargeformostofthesynchronousbuck converterapplications. TheFKD28N15meettheRoHSandGreen Productrequirement,100EASguaranteedwith f

FETEKFETek Technology Corp.

台灣東沅公司 東沅科技股份有限公司

FETEK

FQAF28N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=22A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.09Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FQAF28N15

150VN-ChannelMOSFET

Features •22A,150V,RDS(on)=0.09Ω@VGS=10V •Lowgatecharge(typical40nC) •LowCrss(typical50pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQB28N15

150VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQI28N15

150VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQP28N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.09Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FQP28N15

150VN-ChannelMOSFET

150VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQPF28N15

150VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQPF28N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=16.7A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.09Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

STB28N15

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

Samhop

三合微科

Samhop

STU28N15

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

Samhop

三合微科

Samhop

详细参数

  • 型号:

    FQA28N15

  • 功能描述:

    MOSFET 150V N-Channel QFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
onsemi
23+
TO-3PN
30000
晶体管-分立半导体产品-原装正品
询价
FAIRCHILD
2014
NA
25
全新原装!优势库存热卖中!
询价
onsemi(安森美)
23+
TO-3P
7814
支持大陆交货,美金交易。原装现货库存。
询价
FAIRCHILD
08+(pbfree)
TO-247TO-3PTO-3PF
8866
询价
仙童
05+
TO-247
1300
原装进口
询价
FAIRCHILD
23+
TO3P
7635
全新原装优势
询价
2017+
TO-3P
28562
只做原装正品假一赔十!
询价
FSC
2022+
TO-247
5000
只做原装公司现货
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
ONSemiconductor
18+
NA
3232
进口原装正品优势供应QQ3171516190
询价
更多FQA28N15供应商 更新时间2024-4-28 10:12:00