200V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：628.95 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12.6A@ TC=25℃ · Drain Source Voltage -VDSS= -200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.47Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.72 Kbytes 页数：2 Pages

ISC

无锡固电

200V P-Channel MOSFET

ONSEMI

安森美半导体

200V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：615.01 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

200V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：632.86 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

FQB12P20 / FQI12P20 200V P-Channel MOSFET

文件：1.01973 Mbytes 页数：9 Pages

FAIRCHILD

仙童半导体