isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=17.2A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：363.48 Kbytes 页数：2 Pages

ISC

无锡固电

400V N-CHANNEL MOSFET

文件：730.64 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

400V N-CHANNEL MOSFET

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=12.2A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：421.53 Kbytes 页数：2 Pages

ISC

无锡固电

400V N-Channel MOSFET

Features • 12.2A, 400V, RDS(on) = 0.27Ω @VGS = 10 V • Low gate charge ( typical 45 nC) • Low Crss ( typical 30 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：707.45 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

文件：728.16 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体