250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 27A, 250V, RDS(on) = 0.11Ω @VGS = 10 V • Low gate charge ( typical 50 nC) • Low Crss ( typical 45 pF) • Fast switchi

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Fairchild

仙童半导体

N 沟道 QFET® MOSFET 250V, 2.7A, 110mΩ

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •27A, 250V, RDS(on)= 110mΩ（最大值）@VGS = 10 V, ID = 13.5A栅极电荷低（典型值：50nC)\n•低 Crss（典型值45pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体

250V N-CHANNEL MOSFET

文件：712.28 Kbytes 页数：8 Pages

Fairchild

仙童半导体

250V N-Channel MOSFET

文件：784.44 Kbytes 页数：9 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=25.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.11Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：332.37 Kbytes 页数：2 Pages

ISC

无锡固电