330V, 180A PDP Trench IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High Current Capability • Low saturation voltage: VCE(sat) =1.03V @ IC

文件：657.47 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

330V, 180A PDP Trench IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High Current Capability • Low saturation voltage: VCE(sat) =1.03V @ IC

文件：695.91 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

330V, 180A PDP Trench IGBT

General Description Using novel trench IGBT Technology, Fairchild®’s new series of trench IGBTs offer the optimum performance for PDP TV applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.68

文件：736.25 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

330V, 180A PDP Trench IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High Current Capability • Low saturation voltage: VCE(sat) =1.03V @ IC

文件：695.91 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

330 V PDP Trench IGBT

文件：655.99 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

330 V PDP Trench IGBT

文件：655.99 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

330 V PDP Trench IGBT

文件：655.99 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

330 V PDP 沟道 IGBT

Fairchild 的全新沟道 IGBT 产品系列采用创新型沟道 IGBT 技术，为 PDP 等低导通和开关损耗至关重要的应用提供最佳性能。 •高电流能力\n•高输入阻抗\n•符合 RoHS 标准;

ONSEMI

安森美半导体

330V, 180A PDP Trench IGBT

ONSEMI

安森美半导体

Package：TO-3P-3，SC-65-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 330V 180A 390W TO3P

ONSEMI

安森美半导体