DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

360 V PDP Trench IGBT

General Description Using novel trench IGBT technology, Fairchild’s new series of trench IGBTs offer the optimum performance for consumer appliances and PDP TV applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Vo

文件：1.1359 Mbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

360 V PDP Trench IGBT

Using novel trench IGBT technology, ON Semiconductor’s new series of trench IGBTs offer the optimum performance for consumer appliances and PDP TV applications where low conduction and switching losses are essential. • High Current Capability\n• Powerful & Variety applications.\n• RoHS Compliant\n• Eco-Friendly\n• High Input Impedance\n• optimum performance for consumer appliances and PDP TV applications.\n• Fast Switching\n• Optimum performance;

ONSEMI

安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 360V 125W DPAK

ONSEMI

安森美半导体